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| NTE5700 thru NTE5705 Industrial Power Module Description: The NTE5700 through NTE5705 series of Integrated Power Circuits consist of power thyristors and power diodes configured in a single package. Applications include power supplies, control circuits and battery chargers. Features: D Glass Passivated Junctions for Greater Reliability D Electrically Isolated Base Plate D High Dynamic Characteristics Absolute Maximum Ratings: Maximum Repetitive Peak Reverse Voltage (VS 0), VRRM . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1200V Maximum Non--Repetitive Peak Reverse Voltage, VRSM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1300V Maximum Repetitive Peak Off State Voltage Gate Open Circuit, VDRM . . . . . . . . . . . . . . . . . . 1200V Thermal and Mechanical Characteristics: Junction Operating Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . --40 to +125C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . --40 to +150C Maximum Internal Thermal Resistance, One Junction to Case, RthJC DC Operation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.24K/W Maximum Thermal Resistance, Base to Heatsink, RthCS Mounting Surface Smooth and Greased . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.10K/W Mounting Torque, Base to Heatsink 10% (Note 1), T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5Nm Approximate Weight, wt . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 58g (2.0oz) Note 1. A mounting compound is recommended and the torque should be checked after a period of about 3 hours to allow for the spread of the compound. Electrical Characteristics: Parameter Forward Conduction Maximum DC Output Current Maximum Average On--State and Forward Current Maximum RMS Current Maximum Peak, One--Cycle Non--Repetitive On--State N R titi O St t or Forward Current IO IT(AV) IF(AV) IRMS ITSM or IFSM TC = +85C, Full Bridge Circuits (NTE5700, NTE5701, NTE5702) 180 Sine Wave Conduction Circuits (All Types) 180 Sine Wave Conduction Circuit (NTE5702) 10ms 8.3ms 10ms 8.3ms Maximum I2t for Fusing I2t 10ms 8.3ms 10ms 8.3ms Maximum I2Ot for Fusing Maximum Value of Threshold Voltage Maximum Value of On--State Slope Resistance Maximum Peak On--State or Forward Voltage F d V lt Maximum Non--Repetitive Rate of Rise of Turned On Circuit Maximum Holding Current Maximum Latching Current Triggering Maximum Peak Gate Power Maximum Average Gate Power Maximum Peak Gate Current Maximum Peak Negative Gate Voltage Maximum Gate Voltage Required to Trigger t Ti PGM PG(AV) IGM --VGM VGT TJ = --40C TJ = +25C TJ = +125C Anode Supply = 6V Resistive Load R i ti L d 8.0 2.0 2.0 10 3.0 2.0 1.0 W W A V V V V I2Ot VT(TO) rT VTM VFM di/dt IH IL 100% VRRM Sinusoidal Half Wave, Reapplied R li d Initial I iti l TJ = TJ M Max No Voltage Reapplied R li d 100% VRRM Initial TJ = TJ Max Reapplied R li d No Voltage Reapplied R li d 25 12.5 28 300 315 357 375 450 410 637 580 6365 0.82 12 TJ = +25C, 180 Condition C diti 1.35 1.35 200 100 250 A A A A A A A A2s A2s A2s A2s A2Os V mW V V A/ms mA mA Symbol Test Conditions Rating Unit t = 0.1 to 10ms, No Voltage Reapplied, Note 2 TJ = +125C TJ = +125C ITM = p x IT(AV) IFM = p x IF(AV) TJ = +125C, from 0.67VDRM, ITM = p x IT(AV), Ig = 500mA, tr < 0.5ms, tp > 6ms TJ = +25C, Anode Supply = 6V, Resistive Load, Gate Open Circuit TJ = +25C, Anode Supply = 6V, Resistive Load Electrical Characteristics (Cont'd): Parameter Triggering (Cont'd) Maximum Gate Current Required to Trigger t Ti IGT TJ = --40C TJ = +25C TJ = +125C Maximum Gate Voltage that will not Trigger Blocking Maximum Critical Rate of Rise of Off--State Voltage Maximum Peak Reverse and Off--State Leakage Current at VRRM, VDRM RMS Isolation Voltage dv/dt IRM IDM VINS 50Hz, Circuit to Base, All Terminals Shorted TJ = +125C, Exponential to 0.67VDRM, Gate Open Circuit TJ = TJ Max, Gate Open Circuit 200 10 2.0 2500 V/ms mA mA V VGD TJ = +125C, Rated VDRM Applied Anode Supply = 6V Resistive Load R i ti L d 90 60 35 0.2 mA mA mA V Symbol Test Conditions Rating Unit Note 2. I2t for time tx = I2 Ot Otx. Pin Connection and Schematic Diagrams: NTE No. 5700 Description Single Phase, Hybrid Bridge, Common Cathode, Freewheeling Diode Terminal Positions Schematic Diagrams G1 AC1 AC1 G1 (- ) AC2 AC2 G2 (+) G2 * (- ) - (+) 5701 Single Phase, Hybrid Bridge, Common Anode, Freewheeling Diode G1 AC1 AC1 G1 (- ) AC2 AC2 G2 (+) G2 * (- ) - (+) 5702 Single Phase, All SCR Bridge AC1 AC2 G1 AC1 G3 G2 G4 (+) (- ) AC2 G3 G1 * G4 G2 (- ) - (+) * For transient protection, a Metal Oxide Varistor (MOV) may be connected externally across terminals AC1 & AC2. Pin Connection and Schematic Diagrams (Cont'd): NTE No. 5703 Description SCR AC Switch AC1 G2 AC2 Terminal Positions Schematic Diagrams G2 G1 G1 AC1 * AC2 5704 Hybrid Doubler AC1 (- ) AC1 G1 G1 (+) (- ) - (+) 5705 SCR Doubler AC G1 (- ) G1 G2 G2 (+) (- ) - AC1 (+) * For transient protection, a Metal Oxide Varistor (MOV) may be connected externally across terminals AC1 & AC2. 1.250 (31.75) .200 (5.08) 1.910 (48.5) 2.500 (63.5) .500 (12.7) .980 (24.89) Max .600 (15.24) Max NOTE: Can be used with Heat Sink NTE441A |
Price & Availability of NTE5705
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